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AT45DB161E датащи(PDF) 21 Page - Renesas Technology Corp

номер детали AT45DB161E
подробное описание детали  16-Mbit DataFlash (with Extra 512-kbits) 2.3 V or 2.5 V Minimum SPI Serial Flash Memory
PDF  77 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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AT45DB161E датащи(HTML) 21 Page - Renesas Technology Corp

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DS-AT45DB161E-8782 Rev. P
Page 21
1/27/23
© 2023 Renesas Electronics
AT45DB161E Datasheet
7.10 Chip Erase
The Chip Erase command allows the entire main memory array to be erased can be erased at one time.
To execute the Chip Erase command, a four-byte command sequence of C7h, 94h, 80h, and 9Ah must be
clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into
the device, and any data clocked in after the opcode are ignored. After the last bit of the opcode sequence has
been clocked in, the CS pin must be deasserted to start the erase process. The erase operation is internally self-
timed and takes place in a time of tCE. During this time, the RDY/BUSY bit in the Status Register indicates that the
device is busy.
The Chip Erase command does not affect sectors that are protected or locked down; the contents of those sectors
remains unchanged. Only those sectors that are not protected or locked down are erased.
The WP pin can be asserted while the device is erasing, but protection is not activated until the internal erase
cycle completes.
The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it is indicated by the EPE bit in the Status Register.
Table 4. Chip Erase Command
Figure 4. Chip Erase
7.11 Program/Erase Suspend
In some code and data storage applications, it might not be possible for the system to wait the milliseconds
required for the Flash memory to complete a program or erase cycle. The Program/Erase Suspend command
allows a program or erase operation in progress to a particular 128KB sector of the main memory array to be
suspended so that other device operations can be performed.
Example: By suspending an erase operation to a particular sector, the system can perform functions such as a
program or read operation within a different 128KB sector. Other device operations, such as Read Status
Register, can also be performed while a program or erase operation is suspended.
To perform a Program/Erase Suspend, an opcode of B0h must be clocked into the device. No address bytes need
to be clocked into the device, and any data clocked in after the opcode are ignored. When the CS pin is
deasserted, the program or erase operation currently in progress is suspended within a time of tSUSP. One of the
Program Suspend bits (PS1 or PS2) or the Erase Suspend bit (ES) in the Status Register is then set to the logic 1
state. Also, the RDY/BUSY bit in the Status Register indicates that the device is ready for another operation.
Read operations are not allowed to a 128-kB sector that has had its program or erase operation suspended. If a
read is attempted to a suspended sector, then the device outputs undefined data. Therefore, when performing a
Continuous Array Read operation and the device's internal address counter increments and crosses the sector
boundary to a suspended sector, the device then starts outputting undefined data continuously until the address
counter increments and crosses a sector boundary to an unsuspended sector.
A program operation is not allowed to a sector that has been erase suspended. If a program operation is
attempted to an erase suspended sector, then the program operation aborts.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Chip Erase
C7h
94h
80h
9Ah
C7h
94h
80h
9Ah
CS
Each transition represents eight bits



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