BCV47

NPN Darlington transistor

1 October 2022

Product data sheet

1. General description

NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

PNP complement: BCV26

2. Features and benefits

• Medium current of 500 mA

• Low voltage of 60 V

• High DC current gain of minimum 2000

3. Applications

• Preamplifier input amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCBO

collector-base voltage open emitter

-

-

80

V

VCES

collector-emitter

voltage

base short-circuited to emitter

-

-

60

V

IC

collector current

-

-

500

mA

ICM

peak collector current

-

-

800

mA

hFE

DC current gain

VCE = 5 V; IC = 100 mA; Tamb = 25 °C

[1]

10000 -

-

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

B

base

2

E

emitter

3

C

collector

1

2

3

SOT23

aaa-029089

B

C

E

TR2

TR1