Nexperia

BCV47

NPN Darlington transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

80

-

-

V

V(BR)CES

collector-emitter

breakdown voltage

IC = 2 mA; VBE = 0 V; Tamb = 25 °C

60

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA; Tamb = 25 °C

10

-

-

V

ICBO

collector-base cut-off

current

VCB = 60 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICES

collector-emitter cut-off

current

VCE = 60 V; VBE = 0 V; Tamb = 25 °C

-

-

100

nA

IEBO

emitter-base cut-off

current

VEB = 10 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 5 V; IC = 1 mA; Tamb = 25 °C

[1]

2000

-

-

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

[1]

4000

-

-

VCE = 5 V; IC = 100 mA; Tamb = 25 °C

[1]

10000 -

-

hFE

DC current gain

VCE = 5 V; IC = 500 mA; Tamb = 25 °C

[1]

2000

-

-

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 1 mA; Tamb = 25 °C

-

-

1

V

VBEsat

base-emitter saturation

voltage

IC = 100 mA; IB = 0.1 mA; Tamb = 25 °C

-

-

1.5

V

VBEon

base-emitter turn-on

voltage

IC = 10 mA; VCE = 5 V; Tamb = 25 °C

-

-

1.4

V

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02

mgd837

0

60000

80000

20000

40000

10-1

1

IC (mA)

hFE

10

102

103

VCE = 2 V

Fig. 1. DC current gain; typical values

BCV47

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Product data sheet

1 October 2022

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