BCP69 datasheet(14/24 Pages) NEXPERIA

номер детали	BCP69

подробное описание детали	20 V, 2 A PNP medium power transistors

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BCP69_BC869_BC69PA

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Product data sheet

Rev. 7 — 12 October 2011

14 of 24

Nexperia

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

VCE = 1V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 15. hFE selection -16: DC current gain as a

function of collector current; typical values

Fig 16. hFE selection -16: collector current as a

function of collector-emitter voltage; typical

values

VCE = 1V

(1) Tamb = 55 C

(2) Tamb =25 C

(3) Tamb = 100 C

IC/IB =10

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Fig 17. hFE selection -16: base-emitter voltage as a

function of collector current; typical values

Fig 18. hFE selection -16: collector-emitter saturation

voltage as a function of collector current;

typical values

006aac697

100

200

300

hFE

IC (A)

-10-4

-10

-1

-10-3

-10-1

-10-2

(1)

(2)

(3)

006aab403

(A)

VCE (V)

−2.4

−1.6

−2.0

−0.8

−1.2

−0.4

−1

−5

−2

−3

−4

IB (mA) = −18.0

−16.2

−3.6

−5.4

−7.2

−9.0

−14.4

−12.6

−10.8

−1.8

006aac698

-0.4

-0.8

-1.2

VBE

(V)

0.0

IC (mA)

-10-1

-104

-103

-1

-102

-10

(1)

(2)

(3)

006aac699

-10-1

-10-2

-1

VCEsat

(V)

-10-3

IC (mA)

-10-1

-104

-103

-1

-102

-10

(1)

(2)

(3)

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