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BCP69 датащи(PDF) 13 Page - Nexperia B.V. All rights reserved

номер детали BCP69
подробное описание детали  20 V, 2 A PNP medium power transistors
PDF  24 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
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BCP69 датащи(HTML) 13 Page - Nexperia B.V. All rights reserved

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BCP69_BC869_BC69PA
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Product data sheet
Rev. 7 — 12 October 2011
13 of 24
Nexperia
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7.
Characteristics
[1]
Pulse test: tp  300 s;  = 0.02.
Table 8.
Characteristics
Tamb =25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 25 V; IE =0A
-
-
100
nA
VCB = 25 V; IE =0A;
Tj = 150 C
--
10
A
IEBO
emitter-base cut-off
current
VEB = 5V; IC =0A
-
-
100
nA
hFE
DC current gain
VCE = 10 V
IC = 5mA
50
-
-
DC current gain
VCE = 1V
IC = 500 mA
[1]
85
-
375
IC = 1A
[1]
60
-
-
IC = 2A
[1]
40
-
-
DC current gain
VCE = 1V
hFE selection -16
IC = 500 mA
[1]
100
-
250
hFE selection -25
IC = 500 mA
[1]
160
-
375
VCEsat
collector-emitter
saturation voltage
IC = 1A; IB = 100 mA
[1]
--
0.5
V
IC = 2A; IB = 200 mA
[1]
0.6
V
VBE
base-emitter voltage
VCE = 10 V; IC = 5mA
[1]
--
0.7
V
VCE = 1V; IC = 1A
[1]
--
1V
Cc
collector capacitance
VCB = 10 V; IE =ie =0A;
f=1MHz
-28
-
pF
fT
transition frequency
VCE = 5V; IC = 50 mA;
f=100MHz
40
140
-
MHz



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