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SM30T28CAY датащи(PDF) 4 Page - STMicroelectronics |
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SM30T28CAY датащи(HTML) 4 Page - STMicroelectronics |
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4 / 16 page ![]() 1.1 Characteristics (curves) Figure 3. Maximum peak power dissipation versus initial junction temperature 0 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 150 175 200 PPP (W) Tj (°C) 10/1000 µs VBR ≥ 36 V VBR < 36 V Figure 4. Maximum peak pulse power versus exponential pulse duration 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 PPP (kW) t p (ms) Tj initial = 25 °C VRM ≤ 16 V VRM > 16 V Figure 5. Maximum peak pulse current versus clamping voltage 0.1 1 10 100 1000 10000 1 10 100 1000 IPP(A) VCL(V) 8/20 µs 10/1000 µs Figure 6. Dynamic resistance versus pulse duration 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 RD (Ω) t p(ms) Figure 7. Junction capacitance versus reverse applied voltage (unidirectional type) 0.01 0.1 1 10 100 1 10 100 1000 C (nF) V R (V) SM30T6V8AY SM30T39AY SM30T18AY SM30T56AY SM30T82AY f = 1 MHz Vosc = 30 mVRMS Tj = 25 °C SM30T220AY Figure 8. Junction capacitance versus applied voltage (bidirectional type) 0.01 0.1 1 10 100 1 10 100 1000 C (nF) SM30T6V8CAY SM30T39CAY SM30T18CAY SM30T56CAY SM30T82CAY SM30T220CAY f = 1 MHz Vosc = 30 mVRMS Tj = 25 °C V R(V) SM30TxxAY, SM30TxxCAY Characteristics (curves) DS8599 - Rev 12 page 4/16 |
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