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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32U595AI датащи(PDF) 294 Page - STMicroelectronics |
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STM32U595AI датащи(HTML) 294 Page - STMicroelectronics |
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294 / 377 page  Electrical characteristics STM32U59xxx 294/377 DS13633 Rev 1 Figure 45. OPAMP voltage noise density, low-power mode, RLOAD = 20 kΩ 5.3.27 Temperature and backup domain supply thresholds monitoring The temperature and backup domain supply monitoring characteristics are provided in the technical note STM32U585xx and STM32U5Axxx MCUs for PCI products (TN1333) (NDA required). 5.3.28 ADF/MDF characteristics Unless otherwise specified, the parameters given in the table below are derived from tests performed under the ambient temperature, fAHB frequency and VDD supply voltage conditions summarized in Table 32, with the following configuration: • Output speed set to OSPEEDRy[1:0] = 10 • Capacitive load CL = 30 pF • Measurement points done at 0.5 × VDD level • I/O compensation cell activated • HSLV activated when VDD ≤ 2.7 V • Voltage scaling range 1 Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate function characteristics. |
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