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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32U595AI датащи(PDF) 293 Page - STMicroelectronics |
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STM32U595AI датащи(HTML) 293 Page - STMicroelectronics |
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293 / 377 page  DS13633 Rev 1 293/377 STM32U59xxx Electrical characteristics 343 Figure 44. OPAMP voltage noise density, normal mode, RLOAD = 3.9 kΩ IDDA(OPAMP) OPAMP consumption from VDDA Normal mode no load, quiescent mode, standard speed - 130 190 µA Low-power mode -40 58 Normal mode no load, quiescent mode, high-speed mode - 138 205 Low-power mode -42 60 1. Specified by design and not tested in production, unless otherwise specified. 2. OPA_RANGE must be set to 1 in OPAMP1_CSR. 3. Evaluated by characterization. Not tested in production. 4. Mostly I/O leakage when used in analog mode. Refer to Ilkg parameter in Table 84: I/O static characteristics. 5. R2 is the internal resistance between the OPAMP output and the OPAMP inverting input. R1 is the internal resistance between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1. Table 108. OPAMP characteristics(1)(2) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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