Data Sheet PU10523EJ01V0DS

4

2SC5191

Frequency f (GHz)

MAXIMUM AVAILABLE GAIN/INSERTION

POWER GAIN vs. FREQUENCY

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 1 V

IC = 3 mA

0.1

0.5

0.2

1

2

5

10

0

20

10

30

MAG

|S21e|2

f = 2 GHz

1

2

5

10

20

50

100

0

4

2

8

6

VCE = 3 V

VCE = 1 V

12

5

20

10

50

100

3

2

1

0

5

4

f = 2 GHz

VCE = 3 V

VCE = 1 V

40

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.ncsd.necel.com/