DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5191

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

The mark

shows major revised points.

Document No. PU10523EJ01V0DS (1st edition)

(Previous No. P10395EJ2V1DS00)

Date Published August 2004 CP(K)

Printed in Japan

© NEC Compound Semiconductor Devices, Ltd. 1994 , 2004

FEATURES

• Low Voltage Operation, Low Phase Distortion

• Low Noise

NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

• Large Absolute Maximum Collector Current

IC = 100 mA

• 3-pin minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5191

50 pcs (Non reel)

2SC5191-T1B

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face to perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9

V

Collector to Emitter Voltage

VCEO

6

V

Emitter to Base Voltage

VEBO

2

V

Collector Current

IC

100

mA

Total Power Dissipation

Ptot

Note

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air