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BC846DS датащи(PDF) 5 Page - Nexperia B.V. All rights reserved

номер детали BC846DS
подробное описание детали  65 V, 100 mA NPN/NPN general-purpose transistor
PDF  12 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

BC846DS датащи(HTML) 5 Page - Nexperia B.V. All rights reserved

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BC846DS
©
Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2009
5 of 12
Nexperia
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
Cc
collector capacitance VCB =10V; IE =ie =0A;
f=1MHz
-
1.9
-
pF
Ce
emitter capacitance
VEB = 0.5 V; IC =ic =0A;
f=1MHz
-11
-pF
fT
transition frequency
VCE =5V; IC =10mA;
f = 100 MHz
100
-
-
MHz
NF
noise figure
VCE =5V; IC = 0.2 mA;
RS =2kΩ;
f = 10 Hz to 15.7 kHz
-
1.9
-
dB
VCE =5V; IC = 0.2 mA;
RS =2kΩ; f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
Table 7.
Characteristics …continued
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCE =5V
(1) Tamb = 100 °C
(2) Tamb =25 °C
(3) Tamb = −55 °C
Tamb =25 °C
Fig 3.
Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
006aaa533
200
400
600
hFE
0
IC (mA)
10−2
103
102
10−1
10
1
(3)
(1)
(2)
006aaa532
VCE (V)
010
8
46
2
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25



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