BC846DS

©

Nexperia B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 17 July 2009

4 of 12

Nexperia

BC846DS

65 V, 100 mA NPN/NPN general-purpose transistor

7.

Characteristics

FR4 PCB, standard footprint

Fig 2.

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab622

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

δ = 1

0.75

0.50

0.33

0.10

0.05

0.02

0.01

0

0.20

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

--15

nA

VCB =30V; IE =0A;

Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off

current

VEB =6V; IC = 0 A

-

-

100

nA

hFE

DC current gain

VCE =5V

IC =10 µA

-

280

-

IC = 2 mA

200

300

450

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

55

100

mV

IC = 100 mA; IB = 5 mA

-

200

300

mV

VBEsat

base-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

755

850

mV

IC = 100 mA; IB = 5 mA

-

1000

-

mV

VBE

base-emitter voltage

VCE =5V

IC = 2 mA

580

650

700

mV

IC = 10 mA

-

-

770

mV