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2SC4332 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC4332
подробное описание детали  SILICON POWER TRANSISTOR
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4332 датащи(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D16430EJ3V0DS
2
2SC4332,4332-Z
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
VCEO(SUS)
IC = 3.0 A, IB = 0.3 A, L = 1 mH
60
V
Collector to Emitter Voltage
VCEX(SUS)
IC = 3.0 A, IB1 =
−IB2 = 0.3 A,
VBE(OFF) =
−1.5 V, L = 180
μH, clamped
60
V
Collector Cut-off Current
ICBO
VCE = 60 V, IE = 0
10
μA
Collector Cut-off Current
ICER
VCE = 60 V, RBE = 51
Ω, TA = 125°C
1.0
mA
Collector Cut-off Current
ICEX1
VCE = 60 V, VBE(OFF) =
−1.5 V
10
μA
Collector Cut-off Current
ICEX2
VCE = 60 V, VBE(OFF) =
−1.5 V,
TA = 125
°C
1.0
mA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0
10
μA
DC Current Gain
hFE1
Note
VCE = 2.0 V, IC = 0.5 A
100
DC Current Gain
hFE2
Note
VCE = 2.0 V, IC = 1.0 A
100
400
DC Current Gain
hFE3
Note
VCE = 2.0 V, IC = 3.0 A
60
Collector Saturation Voltage
VCE(sat)1
Note
IC = 3.0 A, IB = 0.15 A
0.3
V
Collector Saturation Voltage
VCE(sat)2
Note
IC = 4.0 A, IB = 0.2 A
0.5
V
Base Saturation Voltage
VBE(sat)1
Note
IC = 3.0 A, IB = 0.15 A
1.2
V
Base Saturation Voltage
VBE(sat)2
Note
IC = 4.0 A, IB = 0.2 A
1.5
V
Collector Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
130
pF
Gain Bandwidth Product
fT
VCE = 10 V, IE =
−0.5 A
150
MHz
Turn-on Time
ton
0.3
μs
Storage Time
tstg
1.5
μs
Fall Time
tf
IC = 3.0 A, RL = 16.7
Ω,
IB1 =
−IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
0.3
μs
Note
Pulse test PW
≤ 350
μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform



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