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SILICON POWER TRANSISTOR

2SC4332,4332-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

Document No. D16430EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

The 2SC4332 and 2SC4332-Z are mold power transistors developed

for high-speed switching and feature a very low collector-to-emitter

saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage power

supply devices, as well as for high-current switching.

FEATURES

• Low collector saturation voltage

VCE(sat) = 0.3 V MAX. (IC = 3.0 A

/ IB = 0.15 A)

• Fast switching speed:

tf

≤ 0.3

μs MAX. (IC = 3.0 A)

• High DC current gain

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

60

V

Base to Emitter Voltage

VEBO

7.0

V

Collector Current (DC)

IC(DC)

5.0

A

Collector Current (pulse)

IC(pulse)

Note1

10

A

Base Current (DC)

IB(DC)

2.5

A

Total Power Dissipation

PT (TC = 25

°C)

15

W

Total Power Dissipation

PT (TA = 25

°C)

1.0

Note2, 2.0Note3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10 ms, duty cycle ≤ 50%

2.

Printing board mounted

3.

7.5 cm

2 x 0.7 mm, ceramic board mounted

PACKAGE DRAWINGS (Unit: mm)

2

13

6.5 ±0.2

5.0 ±0.2

4

2.3

2.3

0.5 ±0.1

2.3 ±0.2

1.1 ±0.2

0.5 −0.1

+0.2

0.5 −0.1

+0.2

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

ELECTRODE CONNECTION

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

TO-252 (MP-3Z)

TO-251 (MP-3)

<R>