2SC3569 datasheet(4/8 Pages) RENESAS

4 / 8 page

Data Sheet D16187EJ1V0DS

2SC3569

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC = 0.5 A, IB1 = 0.1 A, L = 1 mH

400

Collector to emitter voltage

VCEX(SUS)1

IC = 0.5 A, IB1 =

−IB2 = 0.1 A,

L = 180

µH, clamped

450

Collector to emitter voltage

VCEX(SUS)2

IC = 1.0 A, IB1 = 0.2 A,

−IB2 = 0.1 A,

L = 180

µH, clamped

400

Collector cutoff current

ICBO

VCB = 400 V, IE = 0

µA

Collector cutoff current

ICER

VCE = 400 V, RBE = 51

Ω, Ta = 125°C

1.0

Collector cutoff current

ICEX1

VCE = 400 V, VBE(OFF) =

−1.5 V

µA

Collector cutoff current

ICEX2

VCE = 400 V, VBE(OFF) =

−1.5 V,

Ta = 125

°C

1.0

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 0

µA

DC current gain

hFE1*VCE = 5.0 V, IC = 0.2 A

DC current gain

hFE2*VCE = 5.0 V, IC = 0.5 A

Collector saturation voltage

VCE(sat)*IC = 0.7 A, IB = 0.14 A

1.0

Base saturation voltage

VBE(sat)*IC = 0.7 A, IB = 0.14 A

1.2

Turn-on time

ton

1.0

µs

Storage time

tstg

2.5

µs

Fall time

IC = 0.7 A, RL = 214

Ω,

IB1 =

−IB2 = 0.14 A, VCC ≅ 150 V

Refer to the test circuit.

1.0

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

HFE1

20 to 40

30 to 60

40 to 80

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

Collector to Emitter Voltage VCE (V)

Case Temperature TC (

°C)

2SC3569 датащи(PDF) 4 Page - Renesas Technology Corp

2SC3569 датащи(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8

датащи скачать

ссылки URL