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1998

©

Document No. D16187EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC3569

NPN

SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-

VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC3569 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use in drivers such as

switching regulators, DC/DC converters, and high-frequency power

amplifiers.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

VCE(sat) = 1.0 V MAX. (@ 0.7 A)

• Fast switching speed:

tf

≤ 1.0

µs MAX. (@ 0.7 A)

• Wide base reverse-bias SOA:

VCEX(SUS) = 450 V MIN. (@ 0.5 A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

500

V

Collector to emitter voltage

VCEO

400

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

2.0

A

Collector current (pulse)

IC(pulse)*4.0

A

Base current (DC)

IB(DC)

1.0

A

Total power dissipation

PT (Tc = 25

°C)

15

W

Total power dissipation

PT (Ta = 25

°C)

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter