Data Sheet

LT3097

SPECIFICATIONS

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Rev. 0 | 3 of 45

ELECTRICAL CHARACTERISTICS

Junction temperature (TJ) = −40°C to +125°C for the minimum and maximum values, ambient temperature (TA) = 25°C for the typical values,

output capacitance (COUT) = 10 μF ceramic capacitor, and SET capacitance (CSET) = 4.7 μF, unless otherwise noted.

Table 1. Electrical Characteristics

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

POSITIVE INPUT VOLTAGE (VINP) RANGE

2

20

V

NEGATIVE INPUT VOLTAGE (VINN) RANGE

–20

–2.3

V

MINIMUM INP PIN VOLTAGE1

Positive Load Current (ILP) = 500 mA, VINP UVLO rising

1.78

2

V

VINP UVLO hysteresis

75

mV

MINIMUM INN PIN VOLTAGE2

Negative Load Current (ILN) = 500 mA, (VINN) UVLO

rising

–2.3

–1.8

V

VINN UVLO hysteresis

130

mV

POSITIVE OUTPUT VOLTAGE (VOUTP) RANGE

VINP > VOUTP

0

15

V

NEGATIVE OUTPUT VOLTAGE (VOUTN) RANGE

VINN < VOUTN

–19.5

0

V

SETP PIN CURRENT (ISETP)

VINP = 2 V, ILP = 1 mA, VOUTP = 1.3 V, TA = 25°C

99

100

101

µA

2 V < VINP < 20 V, 0 V < VOUTP < 15 V, 1 mA < ILP < 500

mA3

98

100

102

µA

SETN PIN CURRENT (ISETN)

VINN = –2.3 V, ILN = 1 mA, VOUTN = –1.5 V, TA = 25°C

99

100

101

µA

–20 V < VINN < –2.3 V, –19.5 V < VOUTN < 0 V, 1 mA < ILN

< 500 mA4

98

100

102

µA

POSITIVE FAST STARTUP ISETP

PGFBP voltage (VPGFBP) = 289 mV, VINP = 2.8 V, SETP

voltage (VSETP) = 1.3 V

2

mA

NEGATIVE FAST STARTUP ISETN

PGFBN voltage (VPGFBN) = –286 mV, VINN = –2.3 V,

SETN voltage (VSETN) = –1.5 V

1.8

mA

POSITIVE OUTPUT OFFSET VOLTAGE, VOSP (VOUTP –

VSETP)5

VINP = 2 V, ILP = 1 mA, VOUTP = 1.3 V, TA = 25°C

–1

+1

mV

2 V < VINP < 20 V, 0 V < VOUTP < 15 V, 1 mA < ILP < 500

mA3

–2

+2

mV

NEGATIVE OUTPUT OFFSET VOLTAGE, VOSN (VOUTN –

VSETN)6

VINN = –2.3 V, ILN = 1 mA, VOUTN = –1.5 V, TA = 25°C

–1

+1

mV

–20 V < VINN < –2.3 V, –19.5 V < VOUTN < 0 V, 1 mA < ILN

< 500 mA4

–2

+2

mV

POSITIVE LINE REGULATION

ΔISETP

VINP = 2 V to 20 V, ILP = 1 mA, VOUTP = 1.3 V

0.5

±2

nA/V

ΔVOSP

VINP = 2 V to 20 V, ILP = 1 mA, VOUTP = 1.3 V5

0.5

±3

µV/V

NEGATIVE LINE REGULATION

ΔISETN

VINN = –2.3 V to –20 V, ILN = 1 mA, VOUTN = –1.5 V

0.5

±5

nA/V

ΔVOSN

VINN = –2.3 V to –20 V, ILN = 1 mA, VOUTN = –1.5 V6

0.5

±6

µV/V

POSITIVE LOAD REGULATION

ΔISETP

ILP = 1 mA to 500 mA, VINP = 2 V, VOUTP = 1.3 V

3

nA

ΔVOSP

ILP = 1 mA to 500 mA, VINP = 2 V, VOUTP = 1.3 V5

0.1

0.5

mV

NEGATIVE LOAD REGULATION

ΔISETN

ILN = 1 mA to 500 mA, VINN = –2.3 V, VOUTN = –1.5 V

0.1

nA

ΔVOSN

ILN = 1 mA to 500 mA, VINN = –2.3 V, VOUTN = –1.5 V6

0.03

0.5

mV

CHANGE IN ISETP WITH VSETP

VSETP = 1.3 V to 15 V, VINP = 20 V, ILP = 1 mA

30

400

nA

VSETP = 0 V to 1.3 V, VINP = 20 V, ILP = 1 mA

150

600

nA

CHANGE IN ISETN WITH VSETN

VSETN = –1.5 V to –19.5 V, VINN = –20 V, ILN = 1 mA

100

850

nA

VSETN = 0 V to –1.5 V, VINN = –20 V, ILN = 1 mA

150

500

nA

CHANGE IN VOSP WITH VSETP

VSETP = 1.3 V to 15 V, VINP = 20 V, ILP = 1 mA5

0.03

0.6

mV