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MRF9060LSR1 датащи(PDF) 2 Page - Freescale Semiconductor, Inc

номер детали MRF9060LSR1
подробное описание детали  RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
PDF  12 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF9060LSR1 датащи(HTML) 2 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF9060LR1 MRF9060LSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
—
0.17
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs
—
5.3
—
S
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
98
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
50
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
(continued)



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