MRF9060LR1 MRF9060LSR1

5−1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large−signal, common−source amplifier applica-

tions in 26 volt base station equipment.

• Typical Two−Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

Efficiency — 40%

IMD — −31 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

−0.5, +65

Vdc

Gate−Source Voltage

−0.5, + 15

Vdc

MRF9060LR1

Derate above 25°C

MRF9060LSR1

159

0.91

219

1.25

W

W/°C

W

W/°C

Storage Temperature Range

−65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF9060LR1

MRF9060LSR1

1.1

0.8

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9060

Rev. 8, 12/2004

Freescale Semiconductor

Technical Data

MRF9060LR1

MRF9060LSR1

945 MHz, 60 W, 26 V

LATERAL N−CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B−05, STYLE 1

NI−360

MRF9060LR1

CASE 360C−05, STYLE 1

NI−360S

MRF9060LSR1

© Freescale Semiconductor, Inc., 2004. All rights reserved.