IXKC20N60C datasheet(1/2 Pages) IXYS

номер детали	IXKC20N60C

подробное описание детали	CoolMOS Power MOSFET in ISOPLUS220 Package

PDF	2 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

600

V

GS

Continuous

±20

V

I

D25

T

C

= 25

°C; Note 1

14

A

I

D90

T

C

= 90

°C, Note 1

10

A

I

D(RMS)

Package lead current limit

45

A

E

AS

I

o

= 10A, T

C = 25°C

690

mJ

E

AR

I

o

= 20A

1

mJ

P

D

T

C

= 25

°C

125

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +125

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

RMS leads-to-tab, 50/60 Hz, t = 1 minute

2500

V~

F

C

Mounting force

11 ... 65 / 2.4 ...11 N/lb

Weight

3g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ. max.

R

DS(on)

V

GS = 10 V, ID = ID90, Note 3

160

190 m

Ω

V

GS = 10 V, ID = ID90, Note 3 TJ = 125°C

463

m

Ω

V

GS(th)

V

DS = VGS, ID = 1 mA

3.5

5.5

V

I

DSS

V

DS = VDSS

T

J = 25°C1

µA

V

GS = 0 V

T

J = 125°C10

µA

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

G = Gate,

D = Drain,

S = Source

* Patent pending

V

DSS

= 600 V

I

D25

= 14 A

R

DS(on)

= 190 m

Ω

DS98848C(1/04)

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

3RD generation CoolMOS power MOSFET

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped inductive

switching (UIS)

Low thermal resistance due to reduced

chip thickness

Low drain to tab capacitance(<30pF)

Applications

Switched Mode Power Supplies (SMPS)

Uninterruptible Power Supplies (UPS)

Power Factor Correction (PFC)

Welding

Inductive Heating

Advantages

Easy assembly: no screws or isolation

foils required

Space savings

High power density

CoolMOSTM Power MOSFET

in ISOPLUS220TM Package

Electrically Isolated Back Surface

N-Channel Enhancement Mode

Low R

DS(on), Superjunction MOSFET

IXKC 20N60C

CooLMOS is a trademark of Infineon

Technologies, AG

G

D

S

ISOPLUS 220LVTM

Isolated back surface*

E153432

Preliminary Data Sheet

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Аналогичный номер детали - IXKC20N60C

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