IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1

6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ. max.

Q

g(on)

79

nC

Q

gs

V

GS

= 10 V, V

21

nC

Q

gd

46

nC

t

d(on)

20

ns

t

r

V

GS

= 10 V, V

55

ns

t

d(off)

I

60

ns

t

f

10

ns

R

thJC

1

K/W

R

thCH

0.30

K/W

Reverse Conduction

Characteristic Values

(T

Symbol

Test Conditions

min.

typ. max.

V

SD

I

0.8

1.2

V

Note 3

Note: 1. MOSFET chip capability

2. Intrinsic diode capability

3. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXKC 20N60C

TO-220LV Outline