5.7

ESD structure of the TSU111H

The TSU111H is protected against electrostatic discharge (ESD) with dedicated diodes (see Figure 57. ESD

structure). These diodes must be considered at application level especially when signals applied on the input pins

go beyond the power supply rails (VCC+) or (VCC-).

Figure 57. ESD structure

TSU111H

+

-

Current through the diodes must be limited to a maximum of 10 mA, as stated in Table 2. A serial resistor on the

inputs can be used to limit this current.

5.8

EMI robustness of nanopower devices

Nanopower devices exhibit higher impedance nodes and consequently they are more sensitive to EMI. To

improve the natural robustness of the TSU111H device, we recommend adding three capacitors of around 22 pF

each between the two inputs, and between each input and ground. These capacitors lower the impedance of the

input at high frequencies and therefore reduce the impact of the radiation.

TSU111H

ESD structure of the TSU111H

DS14162 - Rev 1

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