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TSU102 датащи(PDF) 8 Page - STMicroelectronics |
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TSU102 датащи(HTML) 8 Page - STMicroelectronics |
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8 / 31 page ![]() Table 6. Electrical characteristics at (VCC +) = 5 V with (VCC -) = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 1 MΩ connected to VCC /2 (unless otherwise specified). Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage T = 25 °C 250 µV -40 °C < T < 150 °C 600 ΔVio/ΔT Input offset voltage drift -40 °C < T < 25 °C 6 μV/°C 25 °C < T < 150 °C 3 Iio Input offset current (1) T = 25 °C 1 pA Iib Input bias current (1) T = 25 °C 1 CMR Common mode rejection ratio, 20 log (ΔVicm/ΔVio),Vicm = 0 to 5 V T = 25 °C 76 107 dB -40 °C < T < 150 °C 73 SVR Supply voltage rejection ratio, VCC = 1.5 to 5.5 V, Vicm = 0 V T = 25 °C 89 110 -40 °C < T < 150 °C 78 Avd Large signal voltage gain, Vout = 0.2 V to (VCC+) - 0.2 V RL = 100 kΩ, T = 25 °C 105 139 RL = 100 kΩ, -40 °C < T < 150 °C 86 VOH High-level output voltage, (drop from VCC+), VID = 200 mV RL = 10 kΩ, T = 25 °C 12 25 mV RL= 10 kΩ, -40 °C < T < 150 °C 40 VOL Low-level output voltage, VID = - 200 mV RL = 10 kΩ, T = 25 °C 7 25 RL= 10 kΩ, -40 °C < T < 150 °C 40 Isink Output sink current, Vout = VCC, VΙD = - 200 mV T = 25 °C 30 45 mA -40 °C < T < 150 °C 15 Isource Output source current, Vout = 0 V, VΙD = 200 mV T = 25 °C 25 39 -40 °C < T < 150 °C 18 ICC Supply current (per channel), no load, Vout = VCC/2 T = 25 °C 2 3 µA -40 °C < T < 150 °C 4.4 -40 °C < T < 125 °C 3.5 GBP Gain bandwidth product RL = 1 MΩ, CL = 60 pF 14 25 kHz Φm Phase margin 81 degrees Gm Gain margin 24 dB SRp Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF, Vout = 0.3 V to (VCC+) - 0.3 V T = 25 °C 1.4 3.8 V/ms -40 °C < T < 150 °C 0.9 SRn Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF, Vout = 0.3 V to (VCC+) - 0.3 V T = 25 °C 2.5 5.5 V/ms -40 °C < T < 150 °C 1.1 Ts Settling time 1 V step, G = +1, 0.1% 430 µs en Equivalent input noise voltage f = 100 Hz 200 nV/√Hz ʃen Low-frequency, peak-to-peak input noise Bandwidth: f = 0.1 to 10 Hz 4.4 µVpp trecP Overload recovery time (from positive rail) 100 mV from rail in comparator, RL = 100 kΩ, VΙD = ±1 V, 25 °C 550 µs TSU111H Electrical characteristics DS14162 - Rev 1 page 8/31 |
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