MMFTP3401

Characteristics

Kennwerte

Tj = 25°C

MMFTP3401-Q/-AQ

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

- ID = 250 µA

- V(BR)DSS

30 V

–

–

Drain-Source leakage current – Drain-Source-Leckstrom

- VDS = 24 V

- IDSS

–

–

1 µA

Gate-Source leakage current – Gate-Source-Leckstrom

VGS = ± 12 V

IGSS

–

–

± 100 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VGS

- ID = 250 µA

- VGS(th)

0.7 V

–

1.4 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

- VGS = 10 V - ID = 4 A

- VGS = 4.5 V - ID = 3,7 A

- VGS = 2.5 V - ID = 2 A

RDS(on)

–

–

50 mΩ

60 mΩ

85 mΩ

Characteristics (dynamic)

Kennwerte (dynamisch)

Tj = 25°C

MMFTP3401-Q/-AQ

Min.

Typ.

Max.

Input Capacitance – Eingangskapazität

- VDS = 15 V

f = 1 MHz

Ciss

–

750 pF

–

Output Capacitance – Ausgangskapazität

- VDS = 15 V

f = 1 MHz

Coss

–

70 pF

–

Reverse Transfer Capacitance – Rückwirkungskapazität

- VDS = 15 V

f = 1 MHz

Crss

–

60 pF

–

Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit

VGS = -10 V - VDD = 15 V R = 3.75 Ω

RG = 6 Ω

(Fig. 1)

td(on)

tr

–

5.8 ns

22 ns

–

Turn-Off Delay & Fall Time – Ausschaltverzögerung und Abfallzeit

VGS = 0 V

- VDD = 15 V R = 3.75 Ω

RG = 6 Ω

(Fig. 1)

td(off)

tf

–

178 ns

69 ns

–

Total Gate Charge – Gesamte Gate-Ladung

-VDS = 15 V -ID = 4 A

-VGS = 10 V

Qg

–

17 nC

–

Gate-Source Charge – Gate-Source-Ladung

-VDS = 15 V -ID = 4 A

-VGS = 10 V

Qgs

–

2.8 nC

–

Gate-Drain Charge – Gate-Drain-Ladung

-VDS = 15 V -ID = 4 A

-VGS = 10 V

Qgd

–

2.0 nC

–

© Diotec Semiconductor AG

http://www.diotec.com/

3

t

d(on)

V

GS

90%

10%

V

DS

t

r

t

d(off)

t

f

Fig. 1

Test circuit for switching

times (R) and avalanche

energy (L)

(“rise“ and “fall“ refer to I )

D

Testaufbau für Schaltzeiten (R)

und Avalanche-Energie (L)

(“rise“ und “fall“ beziehen sich auf I

D)

V

GS

R

G

R

V

DS

V

DD

I

D

L