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MMFTP3401 датащи(PDF) 2 Page - Diotec Semiconductor

номер детали MMFTP3401
подробное описание детали  P-Channel Enhancement Mode FET P-Kanal FETAnreicherungstyp
PDF  5 Pages
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производитель  DIOTEC [Diotec Semiconductor]
домашняя страница  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MMFTP3401 датащи(HTML) 2 Page - Diotec Semiconductor

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MMFTP3401
Characteristics
Kennwerte
Tj = 25°C
MMFTP3401
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
- ID = 250 µA
- V(BR)DSS
30 V
Drain-Source leakage current – Drain-Source-Leckstrom
- VDS = 24 V
- IDSS
1 µA
Gate-Source leakage current – Gate-Source-Leckstrom
VGS = ± 12 V
IGSS
± 100 nA
Gate-Source threshold voltage – Gate-Source Schwellspannung
VGS = VGS
- ID = 250 µA
- VGS(th)
0.7 V
1.3 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
- VGS = 10 V - ID = 4 A
- VGS = 4.5 V - ID = 4 A
- VGS = 2.5 V - ID = 1 A
RDS(on)
65 mΩ
75 mΩ
90 mΩ
Characteristics (dynamic)
Kennwerte (dynamisch)
Tj = 25°C
MMFTP3401
Min.
Typ.
Max.
Forward Transfer Admittance – Übertragungssteilheit
- VDS = 5 V
- ID = 5 A
׀
gfs
׀
7
Input Capacitance – Eingangskapazität
- VDS = 0 V
f = 1 MHz
Ciss
954 pF
Output Capacitance – Ausgangskapazität
- VDS = 0 V
f = 1 MHz
Coss
115 pF
Reverse Transfer Capacitance – Rückwirkungskapazität
- VDS = 0 V
f = 1 MHz
Crss
77 pF
Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit
VGS = -10 V - VDD = 15 V R = 3.6 Ω
RG = 6 Ω
(Fig. 1)
td(on)
tr
6.3 ns
3.2 ns
Turn-Off Delay & Fall Time – Ausschaltverzögerung und Abfallzeit
VGS = 0 V
- VDD = 15 V R = 3.6 Ω
RG = 6 Ω
(Fig. 1)
td(off)
tf
38 ns
7 ns
Total Gate Charge – Gesamte Gate-Ladung
VDS = -15 V - VGS = 4.5 V
-ID = 4.2 A
Qg
8.7 nC
Gate-Source Charge – Gate-Source-Ladung
VDS = -15 V - VGS = 4.5 V
-ID = 4.2 A
Qgs
2.0 nC
Gate-Drain Charge – Gate-Drain-Ladung
VDS = -15 V - VGS = 4.5 V
-ID = 4.2 A
Qgd
2.9 nC
2
http://www.diotec.com/
© Diotec Semiconductor AG
t
d(on)
V
GS
90%
10%
V
DS
t
r
t
d(off)
t
f
Fig. 1
Test circuit for switching
times (R) and avalanche
energy (L)
(“rise“ and “fall“ refer to I )
D
Testaufbau für Schaltzeiten (R)
und Avalanche-Energie (L)
(“rise“ und “fall“ beziehen sich auf I
D)
V
GS
R
G
R
V
DS
V
DD
I
D
L



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