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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N7002 датащи(PDF) 4 Page - NXP Semiconductors |
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2N7002 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  April 1995 4 Philips Semiconductors Product specification N-channel vertical D-MOS transistor 2N7002 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA VGS =0 60 90 − V IDSS drain-source leakage current VDS = 48 V VGS =0 −− 1 µA ±IGSS gate-source leakage current VDS = 0 ±VGS = 15 V −− 10 nA VGS(th) gate-source threshold voltage ID = 1 mA VGS =VDS 0.8 − 3V RDS(on) drain-source on-resistance ID = 500 mA VGS = 10 V − 3.5 5 Ω ID = 75 mA VGS = 4.5 V −− 5.3 Ω Y fs transfer admittance ID = 200 mA VDS = 10 V 100 200 − mS Ciss input capacitance VDS = 10 V VGS =0 f = 1 MHz − 25 40 pF Coss output capacitance VDS = 10 V VGS =0 f = 1 MHz − 22 30 pF Crss feedback capacitance VDS = 10 V VGS =0 f = 1 MHz − 610 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 200 mA VDD =50V VGS = 0 to 10 V −− 10 ns toff turn-off time ID = 200 mA VDD =50V VGS = 0 to 10 V −− 15 ns |
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