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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N7002 датащи(PDF) 2 Page - NXP Semiconductors |
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2N7002 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification N-channel vertical D-MOS transistor 2N7002 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFERENCE DATA PIN CONFIGURATION SYMBOL PARAMETER CONDITIONS MAX. UNIT VDS drain-source voltage 60 V ID drain current DC value 180 mA RDS(on) drain-source on-resistance ID = 500 mA VGS = 10 V 5 Ω VGS(th) gate-source threshold voltage ID = 1 mA VGS =VDS 3V Fig.1 Simplified outline and symbol. Marking code: 702 ook, halfpage MSB003 Top view 12 3 handbook, 2 columns s d g MBB076 - 1 |
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