AS1500 datasheet(3/8 Pages) AMSCO

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Data Sheet AS1500/1/2/3

Revision 1.0, Oct 2004

Page 3 of 8

AS1500 / AS1501 – SPECIFICATIONS

VDD = 3V±10% or 5V±10%, VA = VDD, VB = 0V, –40°C

≤ TA ≤ +125°C unless otherwise noted.

ELECTRICAL CHARACTERISTICS – 10k and 20k VERSIONS

Parameter

Symbol

Conditions

Min

Typ3

Max

Unit

DC CHARACTERISTICS RHEOSTAT MODE

TA = 25°C, VDD = 5V, AS1500, Version: 10k

Ω

810

Ω

Nominal Resistance4

RAB

TA = 25°C, VDD = 5V, AS1501, Version: 20k

Ω

Resistance Tempco5

∆RAB/∆T VAB = VDD, Wiper = No Connect

500

ppm/°C

Wiper Resistance

VDD = 5V

100

200

Ω

Resistor Differential NL6

R-DNL

RWB, VDD = 5V, VA = No Connect

–1

±1/4

LSB

Resistor Integral NL

R-INL

RWB, VDD = 5V, VA = No Connect

–2

±1/2

LSB

DC CHARACTERISTICS POTENTIOMETER DIVIDER

Resolution

Bits

VDD = 5.5V TA = 25°C

–2

±1/2

LSB

Integral Nonlinearity

INL

VDD = 2.7V TA = 25°C

–2

±1/2

LSB

VDD = 5.5V TA = 25°C

–1

±1/4

LSB

Differential Nonlinearity

DNL

VDD = 2.7V TA = 25°C

–1

±1/4

LSB

Voltage Divider Tempco

∆VW /∆T Code = 80H

ppm/°C

Full-Scale Error

VWFSE

Code = FFH, VDD = 5.5V

–4

–2.8

LSB

Zero-Scale Error

VWZSE

Code = 00H, VDD = 5.5V

1.3

LSB

RESISTOR TERMINALS

Voltage Range7

VA, B, W

0VDD

Capacitance8 Ax, Bx

CA, B

f =1MHz, Measured to GND, Code = 80H

Capacitance Wx

f =1MHz, Measured to GND, Code = 80H

120

DIGITAL INPUTS AND OUTPUTS

Input Logic High

VIH

VDD = 5V

2.4

Input Logic Low

VIL

VDD = 5V

0.8

Input Logic High

VIH

VDD = 3V

2.1

Input Logic Low

VIL

VDD = 3V

0.6

Input Current

IIH, IIL

VIN = 5V or 0V, VDD = 5V

±1

µA

Input Capacitance

CIL

5pF

POWER SUPPLIES

Power Supply Range

VDD

2.7

5.5

Supply Current (CMOS)

IDD

VIH = VDD or VIL = 0V, VDD = 5.5V

0.1

µA

Supply Current (TTL)9

IDD

VIH = 2.4V or 0.8V, VDD = 5.5V

0.9

Power Dissipation

(CMOS)10

PDISS

VIH = VDD or VIL = 0V, VDD = 5.5V

27.5

µW

AS1500, Version: 10k

Ω

-54

-25

Power Supply Suppression

Ratio

PSSR

VDD = 5V + 0.5VP

sine wave @ 1kHz

AS1501, Version: 20k

Ω

-52

-25

DYNAMIC CHARACTERISTICS11

BW_10k RWB = 10kΩ, VDD = 5V

1000

kHz

Bandwidth –3dB

BW_20k RWB = 20kΩ, VDD = 5V

500

kHz

Total Harmonic Distortion

THDW

VA = 1VRMS + 2VDC, VB = 2VDC, f = 1kHz

0.003

tS_10k

RWB = 5k

Ω, VA = VDD, VB = 0V, ±1% Error

Band

2µs

VW Settling Time

tS_20k

RWB = 10k

Ω, VA = VDD, VB = 0V, ±1% Error

Band

4µs

eNWB_10k RWB = 5kΩ, f =1kHz

nV/

√ Hz

Resistor Noise Voltage

eNWB_20k RWB = 10kΩ, f =1kHz

nV/

√ Hz

Table 3: Electrical Characteristics – 10k and 20k Versions

3 Typicals represent average readings at 25°C and VDD = 5V.

4 Wiper is not connected. IAB = 350µA for the 10kΩ version and 175µA for the 20kΩ version.

5 All Tempcos are guaranteed by design and not subject to production test.

6 Terminal A is not connected. IW = 350µA for the 10kΩ version and 175µA for the 20kΩ version.

7 Resistor terminals A, B, W have no limitations on polarity with respect to each other.

8 All capacitances are guaranteed by design and not subject to production test. Resistor-terminal capacitance tests are measured with 2.5V

bias on the measured terminal. The remaining resistor terminals are left open circuit.

9 Worst-case supply current consumed when input logic level at 2.4V, standard characteristic of CMOS logic.

10 PDISS is calculated from (IDD×VDD). CMOS logic level inputs result in minimum power dissipation.

11 All dynamic characteristics are guaranteed by design and not subject to production test. All dynamic characteristics use VDD=5V.

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