HAL501 datasheet(15/48 Pages) MICRONAS

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DATA SHEET

HAL 5xy

Micronas

April 15. 2010; DSH000020_004EN

3.6. Characteristics

at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics

for TJ = 25 °C and VDD = 12 V

Fig. 3–6: Recommended pad size SOT89B-1

Dimensions in mm

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

2.3

4.2

TJ = 25 °C

IDD

Supply Current over

Temperature Range

1.6

5.2

VDDZ

Overvoltage Protection

at Supply

−

28.5

IDD = 25 mA, TJ = 25 °C,

t = 20 ms

VOZ

Overvoltage Protection at Output

−

IOH = 25 mA, TJ = 25 °C,

t = 20 ms

VOL

Output Voltage

−

130

280

IOL = 20 mA , TJ = 25 °C

VOL

Output Voltage over

Temperature Range

−

130

400

IOL = 20 mA

IOH

Output Leakage Current

−

0.06

0.1

μA

Output switched off,

TJ = 25 °C, VOH = 3.8 to 24 V

IOH

Output Leakage Current over

Temperature Range

−−

μA

Output switched off,

TJ ≤150 °C, VOH = 3.8 to 24 V

fosc

Internal Oscillator

Chopper Frequency

−−

−

kHz

ten(O)

Enable Time of Output after

Setting of VDD

−

−μsV

DD = 12 V

Output Rise Time

−

400

VDD = 12 V,

RL = 820 Ohm,

CL = 20 pF

Output Fall Time

−

400

RthJSB

case

SOT89B-1

Thermal Resistance Junction

to Substrate Backside

−−

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5 mm,

pad size see Fig. 3–6

RthJA

case

TO92UA-1,

TO92UA-2

Thermal Resistance Junction

to Soldering Point

−−

150

200

K/W

1) B > B

ON + 2 mT or B < BOFF − 2 mT for HAL 50x, B > BOFF + 2 mT or B < BON − 2 mT for HAL 51x

1.05

1.80

0.50

1.50

1.45

2.90

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