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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L6725 датащи(PDF) 9 Page - STMicroelectronics |
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L6725 датащи(HTML) 9 Page - STMicroelectronics |
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9 / 27 page  L6725 Electrical characteristics 9/27 Symbol Parameter Test Condition Min. Typ. Max. Unit Error Amplifier REAREF EAREF Input Resistance Vs. GND 70 100 150 k Ω IFB I.I. bias current VFΒ = 0V 0.290 0.5 µA Ext Ref Clamp 2.3 V VOFFSET Error amplifier offset Vref = 0.6V -5 +5 mV GV Open Loop Voltage Gain Guaranteed by design 100 dB GBWP Gain-Bandwidth Product Guaranteed by design 10 MHz SR Slew-Rate COMP = 10pF Guaranteed by design 5V/ µs Gate Drivers RHGATE_ON High Side Source Resistance VBOOT - VPHASE = 5V 1.7 Ω RHGATE_OFF High Side Sink Resistance VBOOT - VPHASE = 5V 1.12 Ω RLGATE_ON Low Side Source Resistance VCCDR = 5V 1.15 Ω RLGATE_OFF Low Side Sink Resistance VCCDR = 5V 0.6 Ω Protections IOCH OCH Current Source VOCH = 1.7V 90 100 110 µΑ IOCL OCL Current Source 90 100 110 µΑ OVP Over Voltage Trip (VFB / VEAREF) VFB Rising VEAREF = 0.6V 120 % VFB Falling VEAREF = 0.6V 117 % Table 4. Electrical characteristics |
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