AP4513GD datasheet(3/7 Pages) A-POWER

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AP4513GD

P-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-35

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃,ID=-1mA

-0.03

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-4A

mΩ

VGS=-4.5V, ID=-2A

100

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-4A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=±20V

±100

Total Gate Charge

ID=-4A

Qgs

Gate-Source Charge

VDS=-28V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

Fall Time

RD=15Ω

-4

Ciss

Input Capacitance

VGS=0V

410

660

Coss

Output Capacitance

VDS=-25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VSD

Forward On Voltage

IS=-1.7A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-4A, VGS=0V

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.

4.Starting Tj=25

oC , V

DD=25V , L=1mH , RG=25Ω

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