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AP4513GD датащи(PDF) 7 Page - Advanced Power Electronics Corp.

номер детали AP4513GD
подробное описание детали  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4513GD датащи(HTML) 7 Page - Advanced Power Electronics Corp.

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AP4513GD
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7/7
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
0
2
4
6
8
10
12
0.0
3.0
6.0
9.0
12.0
Q G , Total Gate Charge (nC)
I D =-4A
V DS =-28V
10
100
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Q
VG
-4.5V
QGS
QGD
QG
Charge



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