AP4501GD datasheet(1/7 Pages) A-POWER

номер детали	AP4501GD

подробное описание детали	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	7 Pages

Scroll/Zoom	100%

производитель	A-POWER [Advanced Power Electronics Corp.]

домашняя страница	http://www.a-power.com.tw

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Advanced Power

N AND P-CHANNEL ENHANCEMENT

Electronics Corp.

MODE POWER MOSFET

▼ Low Gate Charge

N-CH BVDSS

30V

▼ Fast Switching Speed

RDS(ON)

28mΩ

▼ PDIP-8 Package

ID

7A

▼ RoHS Compliant

P-CH

BVDSS

-30V

RDS(ON)

50mΩ

ID

-5.3A

Description

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25℃

Continuous Drain Current

3

-5.3

A

ID@TA=70℃

Continuous Drain Current

3

-4.7

A

IDM

Pulsed Drain Current

1

-20

A

PD@TA=25℃

Total Power Dissipation

W

Linear Derating Factor

W/℃

TSTG

Storage Temperature Range

℃

TJ

Operating Junction Temperature Range

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

℃/W

Data and specifications subject to change without notice

Thermal Data

30

±20

7

-55 to 150

0.016

-55 to 150

5.8

20

Pb Free Plating Product

Parameter

200622051-1/7

AP4501GD

2

G2

D2

S2

G1

D1

S1

D1

D2

S1

G1

S2

G2

PDIP-8

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Аналогичный номер детали - AP4501GD

производитель	номер детали	датащи	подробное описание детали
Advanced Power Electron...	AP4501GD	89Kb / 7P	Low Gate Charge

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