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AP4501GD датащи(PDF) 7 Page - Advanced Power Electronics Corp.

номер детали AP4501GD
подробное описание детали  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4501GD датащи(HTML) 7 Page - Advanced Power Electronics Corp.

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AP4501GD
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7/7
0
2
4
6
8
10
12
048
12
16
Q G , Total Gate Charge (nC)
I D =-5A
V DS =-24V
100
1000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC



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