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GW60V60DF датащи(PDF) 8 Page - STMicroelectronics

номер детали GW60V60DF
подробное описание детали  Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GW60V60DF датащи(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGW60V60DF, STGWA60V60DF, STGWT60V60DF
8/20
DocID024154 Rev 7
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching energy vs. collector
current
Figure 17. Switching energy vs. gate resistance
Figure 18. Switchng energy vs.junction
temperature
Figure 19. Switching energy vs. collector
emitter voltage
AM17151v1
10
100
1000
10000
0.1
1
10
C (pF)
VCE (V)
C res
C oes
C ies
f= 1MHz, V
GE =0
AM17152v1
0
2
4
6
8
10
12
14
16
0100
200
300
VGE (V)
Qg (nC)
VCC = 480V
IC = 60A
AM17153v1
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
1020304050607080 90 100 110120
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC 400V, VGE= 15V,
Rg=4.7Ω, TJ = 175°C
AM17154v1
500
1000
1500
2000
2500
3000
3500
4000
4500
010
20
30
40
E (μJ)
RG (Ω)
EON
EOFF
V
CC=400V, VGE = 15V,
I
C = 60 A, TJ = 175 °C
AM17155v1
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
25
50
75
100
125
150
E (μJ)
TJ (ºC)
E
ON
E
OFF
V
CC =400V, VGE = 15V,
I
C = 60 A, Rg = 4.7 Ω
AM17156v1
400
600
800
1000
1200
1400
1600
1800
2000
150
200
250
300
350
400
450
E (μJ)
Vce (V)
EON
E
OFF
V
GE = 15V, TJ = 175°C
I
C = 60 A, Rg = 4.7 Ω



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