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GW60V60DF датащи(PDF) 7 Page - STMicroelectronics

номер детали GW60V60DF
подробное описание детали  Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GW60V60DF датащи(HTML) 7 Page - STMicroelectronics

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DocID024154 Rev 7
7/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Safe operating area
Figure 10. Transfer characteristics
Figure 11. Diode VF vs. forward current
Figure 12. Normalized VGE(th) vs. junction
temperature
Figure 13. Normalized V(BR)CES vs. junction
temperature
AM17145v1
0
10
20
30
40
50
60
70
80
90
100
110
110
Ic [A]
f [kHz]
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, RG=4.7Ω,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
AM17146v1
0.01
0.1
1
10
100
110
100
IC (A)
VCE (V)
(single pulse T
C =25 °C,
T
J <=175 °C; VGE =15 V)
1 μs
100 μs
1 ms
AM17146v1
175 °C
0
50
100
150
200
6789
10
11
IC (A)
VGE (V)
- 40 °C
TJ= 25°C
VCE= 5V
AM17148v1
0.8
1.2
1.6
2
2.4
2.8
10
30
50
70
90
110
VF (V)
IF (A)
175 °C
25°C
TJ= - 40°C
VCE= VGE
IC= 1 mA
AM17149v1
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25
0
25
50
75 100 125 150 175
VGE(th)
norm
TJ(ºC)
AM17150v1
0.9
1.0
1.1
-50 -25
0
25
50
75 100 125 150 175
V(BR)ces
norm
TJ(ºC)
IC= 2 mA



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