NAND01G-B datasheet(1/59 Pages) STMICROELECTRONICS

номер детали	NAND01G-B

подробное описание детали	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	59 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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PRELIMINARY DATA

February 2005

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

NAND512-B, NAND01G-B NAND02G-B

NAND04G-B NAND08G-B

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

–

Up to 8 Gbit memory array

–

Up to 64Mbit spare area

–

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

–

x8 or x16 bus width

–

Multiplexed Address/ Data

–

Pinout compatibility for all densities

■

SUPPLY VOLTAGE

–

1.8V device: VDD = 1.7 to 1.95V

–

3.0V device: VDD = 2.7 to 3.6V

■

PAGE SIZE

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x8 device: (2048 + 64 spare) Bytes

–

x16 device: (1024 + 32 spare) Words

■

BLOCK SIZE

–

x8 device: (128K + 4K spare) Bytes

–

x16 device: (64K + 2K spare) Words

■

PAGE READ / PROGRAM

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Random access: 25µs (max)

–

Sequential access: 50ns (min)

–

Page program time: 300µs (typ)

■

COPY BACK PROGRAM MODE

–

Fast page copy without external buffering

■

CACHE PROGRAM AND CACHE READ

MODES

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Internal Cache Register to improve the

program and read throughputs

■

FAST BLOCK ERASE

–

Block erase time: 2ms (typ)

■

STATUS REGISTER

■

ELECTRONIC SIGNATURE

■

CHIP ENABLE ‘DON’T CARE’

–

for simple interface with microcontroller

■

AUTOMATIC PAGE 0 READ AT POWER-UP

–

Boot from NAND support

■

SERIAL NUMBER OPTION

Figure 1. Packages

■

DATA PROTECTION

–

Hardware and Software Block Locking

–

Hardware Program/Erase locked during

Power transitions

■

DATA INTEGRITY

–

100,000 Program/Erase cycles

–

10 years Data Retention

■

RoHS COMPLIANCE

–

Lead-Free Components are Compliant

with the RoHS Directive

■

DEVELOPMENT TOOLS

–

Error Correction Code software and

hardware models

–

Bad Blocks Management and Wear

Leveling algorithms

–

PC Demo board with simulation software

–

File System OS Native reference software

–

Hardware simulation models

TSOP48 12 x 20mm

VFBGA63 9.5 x 12 x 1mm

TFBGA63 9.5 x 12 x 1.2mm

LFBGA63 9.5 x 12 x 1.4mm

FBGA

USOP48 12 x 17 x 0.65mm

Аналогичный номер детали - NAND01G-B

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
STMicroelectronics	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Numonyx B.V	NAND01G-B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5

More results

Аналогичное описание - NAND01G-B

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories 30-May-2006
	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND04G-B2D	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Micron Technology	PC28F00AP30TFA	11Mb / 86P	Numonyx짰 Axcell??P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
Cypress Semiconductor	S34MS01G2	2Mb / 74P	1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
Elite Semiconductor Mem...	F50L2G41LB	1Mb / 50P	3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Numonyx B.V	NAND01GR3B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5

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