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DXTP07040CFG датащи(PDF) 2 Page - Diodes Incorporated

номер детали DXTP07040CFG
подробное описание детали  40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
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DXTP07040CFG датащи(HTML) 2 Page - Diodes Incorporated

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DXTP07040CFG
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-3
A
Peak Pulse Current
ICM
-6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
0.9
W
(Note 6)
2.1
W
(Note 7)
3.1
W
Thermal Resistance, Junction to Ambient
(Note 5)
RϴJA
140
°C/W
(Note 6)
65
°C/W
(Note 7)
44
°C/W
Thermal Resistance, Junction to Leads (Note 8)
RϴJL
8.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge—Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge—Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the collector tab).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXTP07040CFG
Datasheet Number: DS41046 Rev. 1 - 2
2 of 7
www.diodes.com
October 2018
© Diodes Incorporated



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