DXTP07040CFG

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

-65

—

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-40

-57

—

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.8

—

V

IE = -100µA

Collector Cut-Off Current

ICBO

—

—

-20

nA

VCB = -40V

—

—

-10

µA

VCB = -40V, TA = +125°C

Emitter Cut-Off Current

IEBO

—

—

-20

nA

VEB = -6V

DC Current Transfer Static Ratio (Note 10)

hFE

300

527

800

—

IC = -10mA, VCE = -2V

250

432

—

—

IC = -500mA, VCE = -2V

200

377

—

—

IC = -1A, VCE = -2V

150

273

—

—

IC = -2A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)

—

-99

-200

mV

IC = -500mA, IB = -5mA

—

-177

-400

mV

IC = -1A, IB = -10mA

—

-200

-500

mV

IC = -2A, IB = -50mA

Base-Emitter Saturation Voltage (Note 10)

VBE(sat)

—

-0.8

-1

V

IC = -1A, IB = -10mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)

—

-0.75

0.9

V

IC = -1A, VCE = -2V

Transitional Frequency

fT

100

—

—

MHz

IC = -50mA, VCE = -5V,

f = 50MHz

Output Capacitance

Cobo

—

24

—

pF

VCB = -10V, f = 1MHz

Switching Time

tON

—

35

—

ns

VCC = -10V, IC = -500mA,

IB1 = -IB2 = -50mA

tOFF

—

600

—

ns

Note:

10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

DXTP07040CFG

Datasheet Number: DS41046 Rev. 1 - 2

4 of 7

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October 2018

© Diodes Incorporated