DMHC4035LSDQ

Document number: DS37219 Rev. 2 - 2

7 of 9

www.diodes.com

March 2018

© Diodes Incorporated

DMHC4035LSDQ

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 19 On-Resistance Variation with Temperature

0

0.03

0.06

0.09

0.12

0.15

V

= -10V

I =

A

GS

D

-10

V

= 5V

I =

A

GS

D

-

-5

-V

, SOURCE-DRAIN VOLTAGE (V)

Figure 21 Diode Forward Voltage vs. Current

SD

0

3

6

9

12

15

0

0.3

0.6

0.9

1.2

1.5

T = 125 C

A



T = 150 C

A



T = 85 C

A



T = 25 C

A



T = -55 C

A



-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 22 Typical Junction Capacitance

DS

10

100

1000

0

5

10

15

20

25

30

35

40

C

oss

C

rss

Ciss

Q , TOTAL GATE CHARGE (nC)

Figure 23 Gate-Charge Characteristics

g

0

2

4

6

8

10

0

2

4

6

8

10

12

V

= -20V

I = -4.2A

DS

D

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 24 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

T

= 150癈

T = 25癈

J(max)

A

V

= -4.5V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100祍

W

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 20 Gate Threshold Variation vs. Ambient Temperature

A

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-I =1mA

D

-I = 250µA

D

100µs

150°C

25°C