DMHC4035LSDQ

Document number: DS37219 Rev. 2 - 2

5 of 9

www.diodes.com

March 2018

© Diodes Incorporated

DMHC4035LSDQ

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

V

= 5V

I = 5A

GS

D

V

=

V

I = 10A

GS

D

10

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

10

100

1000

0

5

10

15

20

25

30

35

40

C

iss

Coss

Crss

Q

(nC)

g, TOTAL GATE CHARGE

Figure 11 Gate Charge

0

2

4

6

8

10

0

2

4

6

8

10

12

14

V

= 20V

I =

A

DS

D

3.9

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100祍

W

T

= 150癈

T = 25癈

J(max)

A

V

= 4.5V

Single Pulse

GS

DUT on 1 * MRP Board

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(t

h

)

0.5

1

1.5

2

2.5

I = 1mA

D

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

R

E

N

T

(

A

)

S

T = 85°C

A

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

T = 125°C

A

T = 150°C

A

T = 25°C

A

T = -55°C

A

100µs

150°C

25°C