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TCET111. датащи(PDF) 3 Page - Vishay Siliconix |
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TCET111. датащи(HTML) 3 Page - Vishay Siliconix |
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3 / 8 page ![]() TCET111., TCET111.G www.vishay.com Vishay Semiconductors Rev. 2.1, 17-Dec-2020 3 Document Number: 83546 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Note • According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF -1.25 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj -50 - pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7- - V Collector emitter cut-off current VCE = 20 V, IF = 0 A ICEO - 10 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat -- 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc - 110 - kHz Coupling capacitance f = 1 MHz Ck -0.6 - pF CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 1 mA TCET1112G CTR 22 45 - % TCET1113, TCET1113G CTR 34 70 - % TCET1114G CTR 56 90 - % VCE = 5 V, IF = 5 mA TCET1110G CTR 50 - 600 % VCE = 5 V, IF = 10 mA TCET1112G CTR 63 - 125 % TCET1113, TCET1113G CTR 100 - 200 % TCET1114G CTR 160 - 320 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8kV Vpd 1.36 kV Insulation resistance VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Forward current Isi 130 mA Power dissipation Pso 265 mW Rated impulse voltage VIOTM 6kV Safety temperature Tsi 150 °C |
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