TCET111., TCET111.G

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Vishay Semiconductors

Rev. 2.1, 17-Dec-2020

5

Document Number: 83546

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Fig. 5 - Switching Times

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature

Fig. 7 - Forward Current vs. Forward Voltage

Fig. 8 - Relative Current Transfer Ratio vs.

Ambient Temperature

Fig. 9 - Collector Dark Current vs. Ambient Temperature

t p

t

t

0

0

10 %

90 %

100 %

t r

t d

t on

t s

t f

t off

I F

IC

tp

Pulse duration

td

Delay time

tr

Rise time

ton (= td + tr)

Turn-on time

ts

Storage time

t f

Fall time

t

off (= ts + tf)

Turn-off time

96 11698

0

50

100

150

200

250

300

0

20406080

100

120

T

amb - Ambient Temperature (°C)

16736

Coupled device

Phototransistor

IR diode

0.1

1

10

100

1000

0

VF - Forward Voltage (V)

96 11862

1.6

1.2

0.8

0.4

2.0

0

0.2

0.4

0.6

0.8

1.0

1.2

-40

-20

0

20

40

60

80

100 120

T

amb - Ambient Temperature (°C)

16737

V

CE = 5 V,

I

F = 5 mA

020

40

60

80

100

120

T

amb - Ambient Temperature

10 000

1000

100

10

1

V

CE = 30 V

10 V

16738