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STLD257N4F7AG датащи(PDF) 4 Page - STMicroelectronics

номер детали STLD257N4F7AG
подробное описание детали  Automotive-grade N-channel 40 V, 0.82 m typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STLD257N4F7AG датащи(HTML) 4 Page - STMicroelectronics

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Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
120
A
ISDM(1)(2)
Source-drain current (pulsed)
-
480
A
VSD (3)
Forward on voltage
VGS = 0 V, ISD = 90 A
-
1.1
V
trr
Reverse recovery time
ISD = 120 A, di/dt = 100 A/µs,
VDD = 20 V
(see Figure 14. Test circuit for
inductive load switching and diode
recovery times)
-
54
ns
Qrr
Reverse recovery charge
-
53
nC
IRRM
Reverse recovery current
-
1.9
A
1. Limited by package.
2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
STLD257N4F7AG
Electrical characteristics
DS12565 - Rev 4
page 4/13



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