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STLD257N4F7AG датащи(PDF) 2 Page - STMicroelectronics

номер детали STLD257N4F7AG
подробное описание детали  Automotive-grade N-channel 40 V, 0.82 m typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STLD257N4F7AG датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
±20
V
ID(1)(2)
Drain current (continuous) at TC = 25 °C
120
A
ID(1)(2)
Drain current (continuous) at TC = 100 °C
120
A
IDM(2)(3)
Drain current (pulsed)
480
A
PTOT(2)
Total power dissipation at TC = 25 °C
158
W
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
1. Limited by package
2. The value is rated according to Rthj-case bottom side.
3. Pulse width limited by safe operating area
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-c top side
Thermal resistance junction-case top side
2.90
°C/W
Rthj-c bottom side Thermal resistance junction-case bottom side
0.95
Rthj-pcb(1)
Thermal resistance junction-pcb
31.3
1. When mounted on an 1-inch² 2 Oz, Cu board, t ≤ 10 s
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAV
Avalanche current, repetitive or not repetitive (pulse width limited by
maximum junction temperature)
50
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV,
VDD = 25 V)
608
mJ
STLD257N4F7AG
Electrical ratings
DS12565 - Rev 4
page 2/13



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