поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

STL117N4LF7AG датащи(PDF) 3 Page - STMicroelectronics

номер детали STL117N4LF7AG
подробное описание детали  Automotive-grade N-channel 40 V, 2.5 m typ., 119 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL117N4LF7AG датащи(HTML) 3 Page - STMicroelectronics

  STL117N4LF7AG Datasheet HTML 1Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 2Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 3Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 4Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 5Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 6Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 7Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 8Page - STMicroelectronics STL117N4LF7AG Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 17 page
background image
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On/Off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V
40
V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 40 V
10
µA
IGSS
Gate-body leakage
current
VGS = ±20 V, VDS = 0 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS , ID = 250 μA
1.5
2.5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID= 13 A
2.5
3.5
mΩ
VGS = 4.5 V, ID= 13 A
3.4
5
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
-
1780
-
pF
Coss
Output capacitance
-
517
-
pF
Crss
Reverse transfer capacitance
-
58
-
pF
Qg
Total gate charge
VDD = 20 V, ID = 26 A,
VGS = 0 to 10 V
(see Figure 14. Test circuit for
gate charge behavior)
-
27.6
-
nC
Qgs
Gate-source charge
-
5.8
-
nC
Qgd
Gate-drain charge
-
5.7
-
nC
Table 5. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 32 V, ID = 13 A,
RG = 4.7 Ω, VGS = 10 V (see
Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
-
12
-
ns
tr
Rise time
-
11
-
ns
td(off)
Turn-off delay time
-
48.3
-
ns
tf
Fall time
-
18
-
ns
Table 6. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
119
A
ISDM (1)
Source-drain current (pulsed)
476
A
VSD (2)
Source-Drain voltage
ISD = 26 A, VGS = 0 V
-
1.3
V
STL117N4LF7AG
Electrical characteristics
DS11591 - Rev 6
page 3/17



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com