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STR2P3LLH6 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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STR2P3LLH6 датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page ![]() General Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON) (at VGS=-10V) 50mΩ(Max) RDS(ON) (at VGS=-4.5V) 65mΩ(Max) RDS(ON) (at VGS=-2.5V) 90mΩ(Max) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous TC=25°C I D -5.0 A TC=100°C I D -3.5 A Drain Current – Pulsed IDM -20 A Maximum Power Dissipation P D 2.1 W Junction and Storage Temperature Range T J,TSTG -55 To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance junction-case R θJc 1.1 ℃ /W Thermal Resistance unction-to-Ambient R θJA 60 ℃ /W G D S G D S SOT23 Enhancement Mode Power MOSFET P-Channel Rev : www.leiditech.com 01.06.2018 1/6 STR2P3LLH6 STR2P3LLH6 |
Аналогичный номер детали - STR2P3LLH6 |
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Аналогичное описание - STR2P3LLH6 |
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