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STR2P3LLH6 датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали STR2P3LLH6
подробное описание детали  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

STR2P3LLH6 датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=-250μA
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=-30V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=±12V,VDS=0V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=-250μA
-0.5
-0.9
-1.5
V
R
DS(ON)
Drain-Source On-State
Resistance
V
GS=-10V, ID=-4.0A
41
50
mΩ
V
GS=-4.5V, ID=-3.5A
50
6
5
mΩ
V
GS=-2.5V, ID=-2.0A
60
90
mΩ
DYNAMIC PARAMETERS
Clss
Input Capacitance
V
DS=-15V,VGS=0V,
F=1.0MHz
640
pF
Coss
Output Capacitance
80
pF
Crss
Reverse Transfer Capacitance
55
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
VDS=-15V,ID=-1A,
V
GS=-10V,
R
G=3Ω
6.5
nS
tr
Turn-on Rise Time
3.5
nS
td(off)
Turn-Off Delay Time
41
nS
tf
Turn-Off Fall Time
9
nS
Qg
Total Gate Charge
V
DS=-15V,ID=-4.0A,
VGS=-10V
14
nC
Qgs
Gate-Source Charge
1.5
nC
Qgd
Gate-Drain Charge
1.6
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=-1A
0.72
1.4
V
Rg
Gate resistance
VGS=0V, VDS=0V,
F=1MHz
7
Ω
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Rev :
www.leiditech.com
01.06.2018
2/6
STR2P3LLH6



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