NVTYS010N06CL datasheet(1/5 Pages) LEIDITECH

номер детали	NVTYS010N06CL

подробное описание детали	60 N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

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производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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Description

The

uses advanced technology to provide

excellent RDS(ON), low gate charge and operation with

gate voltages as low as 4.5V. This device is suitable for

use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =65A

RDS(ON) < 10mΩ @ VGS=10V (Type：7.5mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP65N06DF XXX YYYY

5000PCS

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TA=25℃

Continuous drain current

20

A

ID@TA=70℃

Continuous drain current

11

A

IDM

Pulsed drain current

60

A

PD@TA=25℃

Power dissipation

60

W

EAS

Single pulsed avalanche energy

30

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

2.1

°C/W

RθJA

Thermal resistance, junction-ambient5)

85

°C/W

DFN3*3-8L

Enhancement Mode Power MOSFET

60 N-Channel

www.leiditech.com

Rev : 01.0 .2021

8

1/5

NVTYS010N06CL

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NVTYS010N06CL датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Аналогичный номер детали - NVTYS010N06CL

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