NVTYS010N06CL datasheet(2/5 Pages) LEIDITECH

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Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

BVDSS

Drain-source breakdown voltage

VGS=0 V, ID=250 μA

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

1.2

1.5

2.5

RDS(ON)

Drain-source on-state resistance

VGS=10 V, ID=20 A

7.5

mΩ

RDS(ON)

Drain-source on-state resistance

VGS=4.5 V, ID=10 A

mΩ

IGSS

Gate-source leakage current

VGS=±20 V

±100

IDSS

Drain-source leakage current

VDS=60 V, VGS=0 V

μA

Ciss

Input capacitance

VGS=0 V, VDS=50 V, ƒ=100

kHz

1182.1

Coss

Output capacitance

199.5

Crss

Reverse transfer capacitance

4.1

td(on)

Turn-on delay time

VGS=10 V,

VDS=50 V,

RG=2 Ω,

ID=10 A

17.9

Rise time

4.0

td(off)

Turn-off delay time

34.9

Fall time

5.5

Total gate charge

ID=10 A,

VDS=50 V,

VGS=10 V

18.4

Qgs

Gate-source charge

3.3

Qgd

Gate-drain charge

3.1

Vplateau

Gate plateau voltage

2.8

Diode forward current

VGS<Vth

ISP

Pulsed source current

180

VSD

Diode forward voltage

IS=20 A, VGS=0 V

1.3

trr

Reverse recovery time

IS=10 A, di/dt=100 A/μs

41.8

Qrr

Reverse recovery charge

36.1

Irrm

Peak reverse recovery current

1.4

Note

1、Calculated continuous current based on maximum allowable junction temperature.

2、Repetitive rating; pulse width limited by max. junction temperature.

3、Pd is based on max. junction temperature, using junction-case thermal resistance.

4、VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃.

5、The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃.

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Rev : 01.0 .2021

2/5

NVTYS010N06CL

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